Method for the formation of resist patterns
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United States of America Patent
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-
Mar 2, 2004
Grant Date -
May 24, 2001
app pub date -
Mar 5, 1997
filing date -
Mar 7, 1996
priority date (Note) -
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status (Latency Note)
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Abstract
Method for the formation of resist patterns by using a chemically amplified resist which comprises an alkali-insoluble base polymer or copolymer and an acid generator, in which the patternwise exposed film of said resist is developed with an organic alkaline developer in the presence of a surface active agent containing a higher alkyl group in a molecule thereof. The resist patterns have no drawback such as cracks and peeling, and thus can be advantageously used in the production of semiconductor devices such as LSIs and VLSIs.
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