Selective nitride etching with silicate ion pre-loading
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United States of America Patent
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Sep 11, 2001
Grant Date -
May 24, 2001
app pub date -
Dec 18, 1998
filing date -
Dec 31, 1997
priority date (Note) -
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Abstract
A nitride wet etch in which liquid TEOS is flowed directly into the hot phosphoric acid bath before wafer etching begins. This preloads the bath chemistry with silicate ions, and thus helps assure very high selectivity to silicon oxides.
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