Minimizing metal corrosion during post metal solvent clean
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United States of America Patent
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Aug 14, 2001
Grant Date -
May 24, 2001
app pub date -
Jun 15, 1999
filing date -
Jun 15, 1999
priority date (Note) -
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Abstract
The inventive method provides a wet cleaning of semiconductor devices on semiconductor wafers after photoresist is stripped. Semiconductor wafers are placed into a centrifuge carriage of a processing chamber. The centrifuge carriage rotates the semiconductor wafers. N-methylpyrrolidine heated to a temperature between 65.degree. C. and 85.degree. C. is sprayed onto the semiconductor wafers. Next N-methylpyrrolidine at room temperature is sprayed onto the semiconductor wafers. Finally, water at room temperature is sprayed onto the semiconductor wafers. The inventive method provides high throughput cleaning without undue corrosion or damage to metal layers.
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