Crystallization processing of semiconductor film regions on a substrate, and devices made therewith

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United States of America Patent

PATENT NO 6322625
SERIAL NO

09200533

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Abstract

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Semiconductor integrated devices such as transistors are formed in a film of semiconductor material formed on a substrate. For improved device characteristics, the semiconductor material has regular, quasi-regular or single-crystal structure. Such a structure is made by a technique involving localized irradiation of the film with one or several pulses of a beam of laser radiation, locally to melt the film through its entire thickness. The molten material then solidifies laterally from a seed area of the film. The semiconductor devices can be included as pixel controllers and drivers in liquid-crystal display devices, and in image sensors, static random-access memories (SRAM), silicon-on-insulator (SOI) devices, and three-dimensional integrated circuit devices.

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Patent Owner(s)

Patent OwnerAddress
TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK THEWEST 116TH STREET AND BROADWAY NEW YORK NY 10027

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Im, James S New York, NY 79 2325

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