Apparatus and method for manufacturing semiconductor device
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United States of America Patent
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May 7, 2002
Grant Date -
May 31, 2001
app pub date -
Dec 2, 1998
filing date -
Dec 2, 1997
priority date (Note) -
Expired
status (Latency Note)
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Abstract
In a semiconductor device manufacturing apparatus comprising at least a reaction chamber and a substrate holder located within the reaction chamber, a silicon nitride film is deposited on the substrate holder within the reaction chamber, and then, a semiconductor substrate is put on the silicon nitride film of the substrate holder within the reaction chamber. A titanium film or a titanium nitride film is deposited on the semiconductor substrate within the reaction chamber, by a chemical vapor deposition process using a titanium halide as a raw material gas.
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