Buried shallow trench isolation and method for forming the same
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United States of America Patent
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-
Jul 2, 2002
Grant Date -
May 31, 2001
app pub date -
Jan 5, 2001
filing date -
Oct 20, 1998
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
An integrated semiconductor device includes a substrate having a buried shallow trench isolation structure and an epitaxial layer disposed over the substrate and the buried shallow trench isolation structure. The epitaxial layer includes a shallow trench isolation structure that extends over the buried shallow trench isolation structure in the substrate to substantially reduce leakage current in the substrate to prevent device latch-up.
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