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Abstract

An integrated circuit is formed containing a metal-oxide ferroelectric thin film. An inert-gas recovery anneal is conducted to reverse the degradation of ferroelectric properties caused by hydrogen. The inert-gas recovery anneal is conducted in an unreactive gas atmosphere at a temperature range from 300.degree. to 1000.degree. C. for a time period from one minute to two hours. Preferably, the metal-oxide thin film comprises layered superlattice material. Preferably, the layered superlattice material comprises strontium bismuth tantalate or strontium bismuth tantalum niobate. If the integrated circuit manufacture includes a forming-gas anneal, then the inert-gas recovery anneal is performed after the forming-gas anneal, preferably at or near the same temperature and for the same time duration as the forming-gas anneal. The inert-gas recovery anneal obviates oxygen-recovery annealing, and it allows continued use of conventional hydrogen-rich plasma processes and forming-gas anneals without the risk of permanent damage to the ferroelectric thin film. The unreactive gas atmosphere can contain a pure unreactive gas or a mixture of unreactive gases. The unreactive gas can be any relatively unreactive gas, such as nitrogen or argon.

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