Method for producing a thermoelectric semiconductor
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United States of America Patent
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Feb 25, 2003
Grant Date -
May 31, 2001
app pub date -
Nov 30, 2000
filing date -
Nov 30, 1999
priority date (Note) -
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status (Latency Note)
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Abstract
A method for producing a thermoelectric semiconductor includes an ingot production step for producing an ingot of a thermoelectric semiconductor and an integrating step for integrating a plurality of the ingots by plastic deforming the ingots to produce an integrated ingot of the thermoelectric semiconductor. The large size of the thermoelectric semiconductor ingot having uniform performance and mechanical strength can be produced by integration of two or more ingots. Therefore, many wafers can be produce at one time in the slicing step, and productivity is improved. Further, two or more ingots are integrated by plastic deformation so that the connecting strength of the connecting interface is strong.
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