Gas phase silicon etching with bromine trifluoride
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United States of America Patent
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Aug 20, 2002
Grant Date -
Jun 7, 2001
app pub date -
Dec 19, 2000
filing date -
Jan 22, 1997
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Abstract
An apparatus and method for gas-phase bromine trifluoride (BrF.sub.3) silicon isotropic room temperature etching system for both bulk and surface micromachining. The gas-phase BrF.sub.3 can be applied in a pulse mode and in a continuous flow mode. The etching rate in pulse mode is dependent on gas concentration, reaction pressure, pulse duration, pattern opening area and effective surface area.
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