Substrate with at least two metal structures deposited thereon, and method for fabricating the same
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United States of America Patent
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Feb 3, 2004
Grant Date -
Jun 7, 2001
app pub date -
Nov 29, 2000
filing date -
Nov 29, 1999
priority date (Note) -
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Abstract
Metal structures that can be produced by a damascene process are disposed in a first insulating layer and a second insulating layer is disposed above the latter. There is in each case at least one cavity which is disposed between the metal structures, is disposed in the first insulating layer and is covered by the second insulating layer. The cavities and the metal structures are produced next to one another by self-aligned process steps.
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