Active pixel sensor pixel having a photodetector whose output is coupled to an output transistor gate
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United States of America Patent
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Sep 13, 2005
Grant Date -
Jun 7, 2001
app pub date -
Dec 26, 2000
filing date -
Jan 28, 1994
priority date (Note) -
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Abstract
An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node. There is also a readout circuit, part of which can be disposed at the bottom of each column of cells and be common to all the cells in the column. A Simple Floating Gate (SFG) pixel structure could also be employed in the imager to provide a non-destructive readout and smaller pixel sizes.
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