Semiconductor device manufacturing method and semiconductor wafer
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United States of America Patent
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-
Nov 20, 2001
Grant Date -
Jun 7, 2001
app pub date -
Nov 30, 2000
filing date -
Dec 2, 1999
priority date (Note) -
Expired
status (Latency Note)
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Abstract
In a method of manufacturing a semiconductor device, a first chip region and a second chip region are provided on a silicon wafer. A first resist pattern for the semiconductor device is to be formed in the first chip region, and the second chip region includes a plurality of characteristic evaluation regions for the semiconductor device, and a second resist pattern is to be formed in each of the plurality of characteristic evaluation regions for the semiconductor device. A data rate of the second chip region is determined based on a data rate of the first chip region. The data rate of the second chip region is determined such that a ratio of the data rate of the first chip region to the data rate of the second chip region is in a range of 1/4 to 4.
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