US Patent Application No: 2001/0003,271

Number of patents in Portfolio can not be more than 2000

Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film

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Abstract

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A processing apparatus of the present invention has a mounted chamber holding a semiconductor wafer and having members for work-processing the substrate under any of heating, plasma and process gas or a combination of them, in which a film of Al.sub.2O.sub.3 and Y.sub.2O.sub.3 is formed on an inner wall surface of the chamber and on those exposed surface of the members within the chamber and has a high-corrosion resistance and insulating property and, when the process gas is introduced onto a processing surface of a semiconductor wafer and diffused into it, any product is less liable to be deposited on a plasma generation area and on those members held within the chamber.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
TOKYO ELECTRON LIMITEDTOKYO4916

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Otsuki, Hayashi Nirasaki-shi, JP 32 428

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Patent Info (Count) # Cites Year
 
Other [Check patent profile for assignment information] (1)
* 2003/0200,929 Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film 32 2003
 
CYPRESS SEMICONDUCTOR CORPORATION (1)
* 2005/0227,382 In-situ surface treatment for memory cell formation 49 2004
 
LAM RESEARCH CORPORATION (22)
7,128,804 Corrosion resistant component of semiconductor processing equipment and method of manufacture thereof 0 2000
7,311,797 Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor 26 2002
* 2004/0002,221 Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor 2 2002
* 2004/0224,128 Low contamination plasma chamber components and methods for making the same 4 2004
7,300,537 Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor 21 2004
* 2005/0150,866 Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor 5 2004
* 7,611,640 Minimizing arcing in a plasma processing chamber 1 2006
7,605,086 Corrosion resistant component of semiconductor processing equipment and method of manufacture thereof 2 2006
8,097,105 Extending lifetime of yttrium oxide as a plasma chamber material 1 2007
* 2008/0169,588 Extending lifetime of yttrium oxide as a plasma chamber material 4 2007
8,486,841 Corrosion resistant component of semiconductor processing equipment and method of manufacture thereof 0 2009
* 2010/0003,826 CORROSION RESISTANT COMPONENT OF SEMICONDUCTOR PROCESSING EQUIPMENT AND METHOD OF MANUFACTURE THEREOF 1 2009
9,190,289 System, method and apparatus for plasma etch having independent control of ion generation and dissociation of process gas 0 2010
* 2011/0212,624 SYSTEM, METHOD AND APPARATUS FOR PLASMA ETCH HAVING INDEPENDENT CONTROL OF ION GENERATION AND DISSOCIATION OF PROCESS GAS 2 2010
* 9,155,181 Distributed multi-zone plasma source systems, methods and apparatus 0 2010
8,999,104 Systems, methods and apparatus for separate plasma source control 0 2010
* 2012/0034,394 DISTRIBUTED MULTI-ZONE PLASMA SOURCE SYSTEMS, METHODS AND APPARATUS 0 2010
9,111,729 Small plasma chamber systems and methods 0 2010
* 2011/0132,874 SMALL PLASMA CHAMBER SYSTEMS AND METHODS 6 2010
* 2012/0217,222 PLASMA PROCESSING SYSTEMS INCLUDING SIDE COILS AND METHODS RELATED TO THE PLASMA PROCESSING SYSTEMS 0 2011
9,177,762 System, method and apparatus of a wedge-shaped parallel plate plasma reactor for substrate processing 0 2011
8,585,844 Extending lifetime of yttrium oxide as a plasma chamber material 0 2011
 
PANASONIC CORPORATION (1)
* 2009/0130,335 PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, DIELECTRIC WINDOW USED THEREIN, AND MANUFACTURING METHOD OF SUCH A DIELECTRIC WINDOW 5 2006
 
SAINT-GOBAIN CERAMICS & PLASTICS, INC. (1)
6,884,514 Method for forming ceramic layer having garnet crystal structure phase and article made thereby 3 2002
 
SAMSUNG DISPLAY CO., LTD. (1)
* 2011/0151,599 Vapor deposition apparatus having improved carrier gas supplying structure and method of manufacturing an organic light emitting display apparatus by using the vapor deposition apparatus 0 2010
 
SAMSUNG ELECTRONICS CO., LTD. (4)
8,277,561 Chemical vapor deposition apparatus 3 2008
* 8,298,338 Chemical vapor deposition apparatus 5 2008
* 2009/0165,713 CHEMICAL VAPOR DEPOSITION APPARATUS 25 2008
* 2009/0260,572 CHEMICAL VAPOR DEPOSITION APPARATUS 4 2008
 
TOSOH CORPORATION (1)
6,902,814 Quartz glass parts, ceramic parts and process of producing those 3 2002
 
HITACHI, LTD. (1)
* 2005/0126,711 Plasma processing apparatus 2 2004
 
JUSUNG ENGINEERING CO., LTD. (2)
* 7,381,274 Gas valve assembly and apparatus using the same 3 2004
* 2004/0255,858 Gas valve assembly and apparatus using the same 1 2004
 
KYOCERA CORPORATION (4)
7,384,696 Corrosion resistant member and method for manufacturing the same 1 2005
* 2005/0282,034 Corrosion resistant member and method for manufacturing the same 0 2005
7,569,280 Corrosion resistant member and method for manufacturing the same 0 2008
* 2008/0292,890 Corrosion Resistant Member and Method for Manufacturing the Same 0 2008
 
HOME ROUND PAPER CO., LTD. (1)
* 7,364,798 Internal member for plasma-treating vessel and method of producing the same 14 2005
 
SHIMADZU CORPORATION (1)
* 2011/0000,529 Cathode Electrode for Plasma CVD and Plasma CVD Apparatus 0 2008
 
FUJIMI INCORPORATED (4)
7,842,383 Yttrium-aluminum double oxide thermal spraying powder 0 2005
* 2006/0116,274 Thermal spraying powder, thermal spraying method, and method for forming thermal spray coating 3 2005
7,279,221 Thermal spraying powder 3 2006
* 2006/0182,969 Thermal spraying powder 0 2006
 
COORSTEK, INC. (4)
* 7,329,467 Ceramic article having corrosion-resistant layer, semiconductor processing apparatus incorporating same, and method for forming same 1 2003
8,017,062 Semiconductor processing components and semiconductor processing utilizing same 0 2005
* 2006/0046,450 Semiconductor processing components and semiconductor processing utilizing same 5 2005
* 2008/0131,689 CERAMIC ARTICLE HAVING CORROSION-RESISTANT LAYER, SEMICONDUCTOR PROCESSING APPARATUS INCORPORATING SAME, AND METHOD FOR FORMING SAME 1 2008
 
TOKYO ELECTRON CO., LTD. (1)
* 2005/0147,852 Internal member for plasma-treating vessel and method of producing the same 2 2005
 
AIR PRODUCTS AND CHEMICALS, INC. (1)
7,119,032 Method to protect internal components of semiconductor processing equipment using layered superlattice materials 4 2004
 
EUGENE TECHNOLOGY CO., LTD. (1)
* 2010/0243,165 APPARATUS FOR SURFACE-TREATING WAFER USING HIGH-FREQUENCY INDUCTIVELY-COUPLED PLASMA 1 2007
 
APPLIED MATERIALS, INC. (33)
* 6,568,896 Transfer chamber with side wall port 7 2001
* 7,670,688 Erosion-resistant components for plasma process chambers 4 2001
* 2004/0033,385 Erosion-resistant components for plasma process chambers 10 2001
6,942,929 Process chamber having component with yttrium-aluminum coating 22 2002
* 6,776,873 Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers 51 2002
* 7,371,467 Process chamber component having electroplated yttrium containing coating 6 2004
* 2004/0191,545 Process chamber component having electroplated yttrium containing coating 7 2004
8,067,067 Clean, dense yttrium oxide coating protecting semiconductor processing apparatus 0 2004
* 2005/0037,193 Clean, dense yttrium oxide coating protecting semiconductor processing apparatus 21 2004
7,479,304 Gas distribution plate fabricated from a solid yttrium oxide-comprising substrate 22 2004
7,846,264 Cleaning method used in removing contaminants from a solid yttrium oxide-containing substrate 2 2006
* 2007/0151,581 Cleaning method used in removing contaminants from a solid yttrium oxide-containing substrate 7 2006
7,696,117 Method and apparatus which reduce the erosion rate of surfaces exposed to halogen-containing plasmas 12 2007
* 2008/0264,565 Method and apparatus which reduce the erosion rate of surfaces exposed to halogen-containing plasmas 10 2007
* 2007/0246,346 ELECTROFORMED SPUTTERING TARGET 6 2007
7,833,401 Electroplating an yttrium-containing coating on a chamber component 2 2007
8,367,227 Plasma-resistant ceramics with controlled electrical resistivity 4 2007
* 2009/0036,292 Plasma-resistant ceramics with controlled electrical resistivity 9 2007
* 2008/0213,496 Method of coating semiconductor processing apparatus with protective yttrium-containing coatings 7 2007
8,110,086 Method of manufacturing a process chamber component having yttrium-aluminum coating 1 2007
8,114,525 Process chamber component having electroplated yttrium containing coating 0 2008
8,016,948 Method of removing contaminants from a coating surface comprising an oxide or fluoride of a group IIIB metal 0 2008
* 2009/0087,615 Corrosion-resistant gas distribution plate for plasma processing chamber 4 2008
8,034,734 Semiconductor processing apparatus which is formed from yttrium oxide and zirconium oxide to produce a solid solution ceramic apparatus 7 2010
8,623,527 Semiconductor processing apparatus comprising a coating formed from a solid solution of yttrium oxide and zirconium oxide 1 2011
* 9,012,030 Process chamber component having yttrium—aluminum coating 0 2012
* 2012/0135,155 PROCESS CHAMBER COMPONENT HAVING YTTRIUM-ALUMINUM COATING 0 2012
* 2012/0138,472 METHOD OF FORMING A PROCESS CHAMBER COMPONENT HAVING ELECTROPLATED YTTRIUM CONTAINING COATING 0 2012
8,871,312 Method of reducing plasma arcing on surfaces of semiconductor processing apparatus components in a plasma processing chamber 0 2012
9,034,199 Ceramic article with reduced surface defect density and process for producing a ceramic article 0 2012
9,212,099 Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics 0 2013
9,090,046 Ceramic coated article and process for applying ceramic coating 0 2013
9,051,219 Semiconductor processing apparatus comprising a solid solution ceramic formed from yttrium oxide, zirconium oxide, and aluminum oxide 0 2013
 
TOKYO ELECTRON LIMITED (55)
7,297,635 Processing method 9 2002
7,204,912 Method and apparatus for an improved bellows shield in a plasma processing system 11 2002
7,166,166 Method and apparatus for an improved baffle plate in a plasma processing system 17 2002
7,166,200 Method and apparatus for an improved upper electrode plate in a plasma processing system 26 2002
* 7,147,749 Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system 21 2002
* 7,137,353 Method and apparatus for an improved deposition shield in a plasma processing system 13 2002
* 2004/0060,656 Method and apparatus for an improved bellows shield in a plasma processing system 2 2002
* 2004/0061,447 Method and apparatus for an improved upper electrode plate in a plasma processing system 2 2002
* 2004/0060,657 Method and apparatus for an improved deposition shield in a plasma processing system 8 2002
* 2003/0141,017 Plasma processing apparatus 9 2003
7,846,291 Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film 2 2003
* 2004/0129,674 Method and system to enhance the removal of high-k dielectric materials 9 2003
* 2005/0098,106 Method and apparatus for improved electrode plate 4 2003
7,780,786 Internal member of a plasma processing vessel 5 2003
* 2004/0216,667 Internal member of a plasma processing vessel 31 2003
* 2004/0182,315 Reduced maintenance chemical oxide removal (COR) processing system 75 2003
* 2004/0168,769 Plasma processing equipment and plasma processing method 11 2004
7,560,376 Method for adjoining adjacent coatings on a processing element 5 2004
7,291,566 Barrier layer for a processing element and a method of forming the same 10 2004
* 2006/0183,344 Barrier layer for a processing element and a method of forming the same 0 2004
7,163,585 Method and apparatus for an improved optical window deposition shield in a plasma processing system 25 2004
7,552,521 Method and apparatus for improved baffle plate 10 2004
7,282,112 Method and apparatus for an improved baffle plate in a plasma processing system 11 2004
* 2005/0103,268 Method and apparatus for an improved baffle plate in a plasma processing system 2 2004
7,601,242 Plasma processing system and baffle assembly for use in plasma processing system 6 2005
* 2005/0235,918 Substrate treating apparatus 0 2005
* 8,454,749 Method and system for sealing a first assembly to a second assembly of a processing system 0 2005
* 2007/0157,683 Method and system for sealing a first assembly to a second assembly of a processing system 3 2005
* 2009/0194,233 Component for semicondutor processing apparatus and manufacturing method thereof 3 2006
8,117,986 Apparatus for an improved deposition shield in a plasma processing system 1 2006
* 2007/0028,839 Method and apparatus for an improved deposition shield in a plasma processing system 7 2006
7,566,379 Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system 2 2006
* 2007/0034,337 Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system 9 2006
* 2007/0095,284 GAS TREATING DEVICE AND FILM FORMING DEVICE 4 2006
7,566,368 Method and apparatus for an improved upper electrode plate in a plasma processing system 6 2006
* 2007/0096,658 METHOD AND APPARATUS FOR AN IMPROVED UPPER ELECTRODE PLATE IN A PLASMA PROCESSING SYSTEM 9 2006
8,118,936 Method and apparatus for an improved baffle plate in a plasma processing system 1 2007
7,811,428 Method and apparatus for an improved optical window deposition shield in a plasma processing system 5 2007
7,678,226 Method and apparatus for an improved bellows shield in a plasma processing system 4 2007
* 2007/0125,494 METHOD AND APPARATUS FOR AN IMPROVED BELLOWS SHIELD IN A PLASMA PROCESSING SYSTEM 8 2007
8,057,600 Method and apparatus for an improved baffle plate in a plasma processing system 2 2007
* 2007/0204,794 METHOD AND APPARATUS FOR AN IMPROVED BAFFLE PLATE IN A PLASMA PROCESSING SYSTEM 7 2007
* 2008/0066,647 Internal member for plasma-treating vessel and method of producing the same 6 2007
7,879,179 Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film 5 2007
* 2008/0069,966 Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film 13 2007
* 2008/0070,032 Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film 12 2007
8,043,971 Plasma processing apparatus, ring member and plasma processing method 4 2008
* 2009/0165,720 SUBSTRATE TREATING APPARATUS 0 2009
8,409,399 Reduced maintenance chemical oxide removal (COR) processing system 2 2009
* 2009/0226,633 Reduced Maintenance Chemical Oxide Removal (COR) Processing System 3 2009
8,449,715 Internal member of a plasma processing vessel 1 2010
* 8,986,495 Plasma processing apparatus 0 2010
* 2011/0132,542 PLASMA PROCESSING APPARATUS 4 2010
* 2012/0200,051 METHOD FOR COATING INTERNAL MEMBER HAVING HOLES IN VACUUM PROCESSING APPARATUS AND THE INTERNAL MEMBER HAVING HOLES COATED BY USING THE COATING METHOD 0 2012
8,877,002 Internal member of a plasma processing vessel 0 2013
 
COVALENT MATERIALS CORPORATION (1)
* 2005/0227,118 Plasma resistant member 12 2005
 
NGK INSULATORS, LTD. (3)
6,783,875 Halogen gas plasma-resistive members and method for producing the same, laminates, and corrosion-resistant members 39 2001
* 7,138,192 Film of yttria-alumina complex oxide, a method of producing the same, a sprayed film, a corrosion resistant member, and a member effective for reducing particle generation 2 2003
* 2004/0067,392 Film of yttria-alumina complex oxide, a method of producing the same, a sprayed film, a corrosion resistant member, and a member effective for reducing particle generation 0 2003
* Cited By Examiner