US Patent Application No: 2001/0003,271

Number of patents in Portfolio can not be more than 2000

Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film

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Abstract

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A processing apparatus of the present invention has a mounted chamber holding a semiconductor wafer and having members for work-processing the substrate under any of heating, plasma and process gas or a combination of them, in which a film of Al.sub.2O.sub.3 and Y.sub.2O.sub.3 is formed on an inner wall surface of the chamber and on those exposed surface of the members within the chamber and has a high-corrosion resistance and insulating property and, when the process gas is introduced onto a processing surface of a semiconductor wafer and diffused into it, any product is less liable to be deposited on a plasma generation area and on those members held within the chamber.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
TOKYO ELECTRON LIMITEDTOKYO4817

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Otsuki, Hayashi Nirasaki, JP 48 371

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Patent Info (Count) # Cites Year
 
TOKYO ELECTRON LIMITED (28)
7,297,635 Processing method 8 2002
7,204,912 Method and apparatus for an improved bellows shield in a plasma processing system 11 2002
7,166,166 Method and apparatus for an improved baffle plate in a plasma processing system 16 2002
7,166,200 Method and apparatus for an improved upper electrode plate in a plasma processing system 24 2002
* 7,147,749 Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system 20 2002
* 7,137,353 Method and apparatus for an improved deposition shield in a plasma processing system 12 2002
7,846,291 Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film 2 2003
7,780,786 Internal member of a plasma processing vessel 4 2003
7,560,376 Method for adjoining adjacent coatings on a processing element 5 2004
7,291,566 Barrier layer for a processing element and a method of forming the same 9 2004
7,163,585 Method and apparatus for an improved optical window deposition shield in a plasma processing system 24 2004
7,552,521 Method and apparatus for improved baffle plate 8 2004
7,282,112 Method and apparatus for an improved baffle plate in a plasma processing system 11 2004
7,601,242 Plasma processing system and baffle assembly for use in plasma processing system 5 2005
* 8,454,749 Method and system for sealing a first assembly to a second assembly of a processing system 0 2005
8,117,986 Apparatus for an improved deposition shield in a plasma processing system 1 2006
7,566,379 Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system 2 2006
7,566,368 Method and apparatus for an improved upper electrode plate in a plasma processing system 6 2006
8,118,936 Method and apparatus for an improved baffle plate in a plasma processing system 1 2007
7,811,428 Method and apparatus for an improved optical window deposition shield in a plasma processing system 5 2007
7,678,226 Method and apparatus for an improved bellows shield in a plasma processing system 4 2007
8,057,600 Method and apparatus for an improved baffle plate in a plasma processing system 2 2007
7,879,179 Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film 4 2007
8,043,971 Plasma processing apparatus, ring member and plasma processing method 3 2008
8,409,399 Reduced maintenance chemical oxide removal (COR) processing system 2 2009
8,449,715 Internal member of a plasma processing vessel 1 2010
* 2011/0132,542 PLASMA PROCESSING APPARATUS 3 2010
8,877,002 Internal member of a plasma processing vessel 0 2013
 
APPLIED MATERIALS, INC. (17)
* 6,568,896 Transfer chamber with side wall port 6 2001
* 7,670,688 Erosion-resistant components for plasma process chambers 3 2001
6,942,929 Process chamber having component with yttrium-aluminum coating 16 2002
* 6,776,873 Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers 48 2002
* 7,371,467 Process chamber component having electroplated yttrium containing coating 4 2004
8,067,067 Clean, dense yttrium oxide coating protecting semiconductor processing apparatus 0 2004
7,479,304 Gas distribution plate fabricated from a solid yttrium oxide-comprising substrate 19 2004
7,846,264 Cleaning method used in removing contaminants from a solid yttrium oxide-containing substrate 2 2006
7,696,117 Method and apparatus which reduce the erosion rate of surfaces exposed to halogen-containing plasmas 6 2007
7,833,401 Electroplating an yttrium-containing coating on a chamber component 1 2007
8,367,227 Plasma-resistant ceramics with controlled electrical resistivity 0 2007
8,110,086 Method of manufacturing a process chamber component having yttrium-aluminum coating 0 2007
8,114,525 Process chamber component having electroplated yttrium containing coating 0 2008
8,016,948 Method of removing contaminants from a coating surface comprising an oxide or fluoride of a group IIIB metal 0 2008
8,034,734 Semiconductor processing apparatus which is formed from yttrium oxide and zirconium oxide to produce a solid solution ceramic apparatus 2 2010
8,623,527 Semiconductor processing apparatus comprising a coating formed from a solid solution of yttrium oxide and zirconium oxide 0 2011
8,871,312 Method of reducing plasma arcing on surfaces of semiconductor processing apparatus components in a plasma processing chamber 0 2012
 
LAM RESEARCH CORPORATION (8)
7,128,804 Corrosion resistant component of semiconductor processing equipment and method of manufacture thereof 0 2000
7,311,797 Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor 25 2002
7,300,537 Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor 18 2004
* 7,611,640 Minimizing arcing in a plasma processing chamber 1 2006
7,605,086 Corrosion resistant component of semiconductor processing equipment and method of manufacture thereof 0 2006
8,097,105 Extending lifetime of yttrium oxide as a plasma chamber material 1 2007
8,486,841 Corrosion resistant component of semiconductor processing equipment and method of manufacture thereof 0 2009
8,585,844 Extending lifetime of yttrium oxide as a plasma chamber material 0 2011
 
FUJIMI INCORPORATED (2)
7,842,383 Yttrium-aluminum double oxide thermal spraying powder 0 2005
7,279,221 Thermal spraying powder 3 2006
 
KYOCERA CORPORATION (2)
7,384,696 Corrosion resistant member and method for manufacturing the same 0 2005
7,569,280 Corrosion resistant member and method for manufacturing the same 0 2008
 
NGK INSULATORS, LTD. (2)
6,783,875 Halogen gas plasma-resistive members and method for producing the same, laminates, and corrosion-resistant members 32 2001
* 7,138,192 Film of yttria-alumina complex oxide, a method of producing the same, a sprayed film, a corrosion resistant member, and a member effective for reducing particle generation 2 2003
 
SAINT-GOBAIN CERAMICS & PLASTICS, INC. (2)
6,884,514 Method for forming ceramic layer having garnet crystal structure phase and article made thereby 3 2002
* 7,329,467 Ceramic article having corrosion-resistant layer, semiconductor processing apparatus incorporating same, and method for forming same 1 2003
 
SAMSUNG ELECTRONICS CO., LTD. (2)
8,277,561 Chemical vapor deposition apparatus 3 2008
* 8,298,338 Chemical vapor deposition apparatus 4 2008
 
AIR PRODUCTS AND CHEMICALS, INC. (1)
7,119,032 Method to protect internal components of semiconductor processing equipment using layered superlattice materials 4 2004
 
COORSTEK, INC. (1)
8,017,062 Semiconductor processing components and semiconductor processing utilizing same 0 2005
 
HOME ROUND PAPER CO., LTD. (1)
* 7,364,798 Internal member for plasma-treating vessel and method of producing the same 14 2005
 
JUSUNG ENGINEERING CO., LTD. (1)
* 7,381,274 Gas valve assembly and apparatus using the same 2 2004
 
TOSOH CORPORATION (1)
6,902,814 Quartz glass parts, ceramic parts and process of producing those 2 2002
* Cited By Examiner