HEAT SINK FOR A SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Jun 14, 2001
app pub date -
Jul 19, 1999
filing date -
Jul 28, 1998
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A heat sink for a semiconductor device comprises a tungsten-copper composite body and a diamond film coated on the surface of the body. A method for fabricating a heat sink for a semiconductor comprises the steps of fabricating a tungsten-copper composite heat sink, modifying a surface of the heat sink by selectively dissolving copper from the surface of the heat sink, carrying out a process for supplying nuclei for growth of a diamond film on the modified surface of the heat sink, and coating the thusly processed surface of the heat sink with a diamond film. Preferably, a process for etching of a tungsten grain precedes selective dissolution of the copper.
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