High-voltage semiconductor device
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United States of America Patent
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Jun 15, 2004
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app pub date -
Dec 15, 2000
filing date -
Dec 17, 1999
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Abstract
A high-voltage semiconductor device includes: a drain region; a metal electrode electrically connected to the drain region; and electrically floating plate electrodes formed on a field insulating film over a semiconductor regionm. Parts of the metal electrodes are extended onto the interlevel dielectric film and located over the respective plate electrodes. Each part of the metal electrode is capacitively coupled to associated one of the plate electrodes.
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