Multilayer wiring structure of semiconductor device, method of producing said multilayer wiring structure and semiconductor device to be used for reliability evaluation
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United States of America Patent
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Jun 17, 2003
Issued Date -
N/A
app pub date -
Jan 17, 2001
filing date -
Jul 11, 1997
priority date (Note) -
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status (Latency Note)
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Abstract
A multilayer wiring structure of a semiconductor device having a stacked structure is arranged to restrain reliability degradation due to stress applied to the region of wiring between opposite upper and lower plugs. The rate of overlap of contact surface between upper plug and wiring on contact surface between lower plug and wiring, is small to the extent that no void is generated. The multilayer wiring structure is produced such that no grain boundary is contained in the region of wiring between upper and lower plugs. The difference in thermal expansion coefficient between the material of wiring and the material of upper and lower plugs, is small to the extent that no void is generated.
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