Unit pixel of CMOS image sensor with capacitor coupled photodiode
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United States of America Patent
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-
Aug 27, 2002
Grant Date -
Jun 28, 2001
app pub date -
Dec 19, 2000
filing date -
Dec 28, 1999
priority date (Note) -
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status (Latency Note)
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Abstract
A unit pixel in a CMOS image sensor, which enhances a capacitance of a photodiode to reduce noises and increase the maximum output signal of the image sensor, is provided. To achieve this, the CMOS image sensor includes a photodiode aligned with an edge of an insulating film for separating elements and formed by doping impurities to a semiconductor layer by an ion implantation; and a capacitor formed along with interface between the photodiode and the insulating film on plan and formed by layering a bottom electrode, a dielectric and an upper electrode contacted with the photodiode.
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