Method for growing nitride semiconductor crystals, nitride semiconductor device, and method for fabricating the same
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United States of America Patent
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Mar 19, 2002
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Jan 12, 2001
filing date -
May 29, 1998
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Abstract
A method for growing nitride semiconductor crystals according to the present invention includes the steps of: a) forming a first metal single crystal layer on a substrate; b) forming a metal nitride single crystal layer by nitrifying the first metal single crystal layer; and c) epitaxially growing a first nitride semiconductor layer on the metal nitride single crystal layer.
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