Semiconductor device having silicon oxide sidewalls
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United States of America Patent
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Oct 22, 2002
Grant Date -
Jun 28, 2001
app pub date -
Dec 27, 2000
filing date -
Dec 27, 1999
priority date (Note) -
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Abstract
A semiconductor device capable of preventing a conductive member embedded in an interlayer dielectric film from oxidation or corrosion and keeping the electric characteristics of the conductive member excellent is obtained. The semiconductor device comprises the interlayer dielectric film, the conductive member embedded in the interlayer dielectric film and side wall insulator films formed on the side surfaces of the conductive member. Thus, the side wall insulator films inhibit moisture and hydroxyl groups contained in the interlayer dielectric film from reaching the conductive member. Therefore, the conductive member is prevented from inconvenience such as oxidation or corrosion resulting from moisture and hydroxyl groups discharged from the interlayer dielectric film. Consequently, the electric characteristics of a contact part can be maintained excellent.
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