Image sensor incorporating therein a capacitor structure and method for the manufacture thereof
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United States of America Patent
Stats
-
Feb 18, 2003
Grant Date -
Jul 5, 2001
app pub date -
Dec 19, 2000
filing date -
Dec 28, 1999
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An image sensor includes a plurality of unit pixels for sensing a light beam to generate an image data. Each of the unit pixels includes, a photoelectric element for sensing a light beam incident thereto and generating photoelectric charges, a transistor including a gate dielectric formed adjacent to the photoelectric element and a gate electrode formed on top of the gate dielectric and a capacitor structure including an insulating film formed on a portion of the photoelectric element and a bottom electrode, wherein the insulating film and the gate dielectric are made of a same material and the bottom electrode and the gate electrode are made of a same material.
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