Manufacturing method of semiconductor integrated circuit device
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United States of America Patent
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-
Aug 19, 2003
Grant Date -
Jul 5, 2001
app pub date -
Dec 28, 2000
filing date -
Dec 28, 1999
priority date (Note) -
Expired
status (Latency Note)
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Abstract
With a view to providing a technique for highly-selective etching of Ru (ruthenium) using a photoresist as an etching mask, an Ru-film, which is an lower electrode material deposited on the side walls and bottom surface of a hole, is covered with a photoresist film, followed by isotropic dry etching in a gas atmosphere containing an ozone gas, whereby a portion of the Ru film outside of the hole is removed.
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