Method for manufacturing a semiconductor memory device using hemispherical grain silicon
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United States of America Patent
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Sep 3, 2002
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N/A
app pub date -
Dec 14, 2000
filing date -
Dec 30, 1999
priority date (Note) -
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Abstract
A semiconductor device for manufacturing a semiconductor memory cell includes the steps of: a) preparing an active matrix provided with at least one transistor, a plurality of conductive plugs electrically connected to the transistors and an insulating layer formed around the conductive plugs; b) forming a supporting layer, made of carbon, on top of the active matrix and patterned into a predetermined configuration, thereby obtaining a patterned supporting layer; c) forming bottom electrodes on the patterned supporting layer; and d) removing the patterned supporting layer.
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