Methylated oxide-type dielectric as a replacement for SiO2 hardmasks used in polymeric low k, dual damascene interconnect integration
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United States of America Patent
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Aug 27, 2002
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N/A
app pub date -
Dec 15, 2000
filing date -
Apr 19, 1999
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Abstract
Disclosed are multilevel interconnects for integrated circuit devices, especially copper/dual damascene devices, and methods of fabrication. Methylated-oxide type hardmasks are formed over polymeric interlayer dielectric materials. Preferably the hardmasks are materials having a dielectric constant of less than 3 and more preferably 2.7 or less. Advantageously, both the hardmask and the interlayer dielectric can be spincoated.
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