Ethyenediaminetetraacetic acid or its ammonium salt semiconductor process residue removal composition and process
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United States of America Patent
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Dec 10, 2002
Issued Date -
N/A
app pub date -
Apr 4, 1997
filing date -
Nov 5, 1990
priority date (Note) -
Expired
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Abstract
An ethylenediaminetetraacetic acid or a mono- di- tri- or tetraammonium salt thereof residue cleaning composition removes photoresist and other residue from integrated circuit substrates. The balance of the composition is desirably made up of water, preferably high purity deionized water, or another suitable polar solvent. A process for removing photoresist or other residue from a substrate, such as an integrated circuit semiconductor wafer including titanium metallurgy, comprises contacting the substrate with the composition for a time and at a temperature sufficient to remove the photoresist or other residue from the substrate. Use of the ethylenediaminetetraacetic acid or a mono- di- tri- or tetraammonium salt thereof in the composition and process provides superior residue removal without attacking titanium or other metallurgy, oxide or nitride layers on the substrate.
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