Process for producing compound semiconductor single crystal
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Feb 13, 2007
Grant Date -
Jul 12, 2001
app pub date -
Jan 4, 2001
filing date -
Jan 7, 2000
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A process for producing compound semiconductor single crystal, comprises the steps of: putting a compound semiconductor raw material into a crucible, setting the crucible in a vertical type of heating furnace to heat and melt the raw material by a heater, promoting a nucleation on a surface of a raw material melt by leaving a solid raw material in a part of the raw material melt, solidifying the raw material melt gradually from the surface of the raw material melt without a seed crystal, and growing a crystal by using a nucleus generated by the nucleation.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully