Liquid crystal display and manufacturing process of thin film transistor used therein
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United States of America Patent
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Jun 4, 2002
Issued Date -
N/A
app pub date -
Feb 1, 2001
filing date -
Oct 21, 1997
priority date (Note) -
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Abstract
A manufacturing process OF a thin film transistor is provided, in which occurrence of a dry spot and occurrence of an etch residue of an ohmic contact layer (n.sup.+ a-Si:H film) due to the dry spot are prevented in photoengraving process for patterning a semiconductor layer and the ohmic contact layer into an island, without any further treatment by any other apparatus. After forming the a-Si:H film 4a which forms the semiconductor layer of the TFT and the n.sup.+ a-Si:H film 5a which forms the ohmic contact layer, a N2 gas plasma discharge is continuously performed using the same plasma CVD apparatus, thereby forming a very thin silicon nitride film 6 having a hydrophilic property on a surface layer of the n.sup.+ a-Si:H film 5a.
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