High speed clock synchronous semiconductor memory in which the column address strobe signal is varied in accordance with a clock signal
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United States of America Patent
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May 27, 2003
Grant Date -
Jul 12, 2001
app pub date -
Jan 10, 2001
filing date -
Jan 12, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The column address strobe signal (CAS) which is changed in cycles as many as a plurality of times that of a clock signal cycle is input to the memory block (MBK0 to MBKn). A plurality of serial data readout from the memory cell array (10) and parallel/serial converted by a parallel/serial converter circuit (21) in synchronism with a clock signal cycle are output for every cycle when the column address signal (CASADR) is changed. Parallel data input to the memory block and serial/parallel converted by a serial/parallel converter circuit (25) in synchronism with the clock signal cycle are written in the memory cell array. In this way, the access specification that the column address strobe signal is varied once per n cycles of the clock signal allows for a more rapid memory operation.
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