Semiconductor device and method of fabricating the same
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United States of America Patent
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Jun 8, 2004
Issued Date -
N/A
app pub date -
Mar 9, 2001
filing date -
Jul 14, 1995
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor device including multiple high-voltage drive transistors in its output section is improved in electrostatic withstand voltage by connecting electrostatic protection transistors in parallel with the high-voltage drive transistors connected to the output pads. The drain withstand voltage of the electrostatic protection transistors is made lower than the drain withstand voltage of the high-voltage drive transistors. In addition, the channel length of electrostatic protection transistors is made short to enable efficient bipolar operation of the electrostatic protection transistors.
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