Semiconductor device and process for producing the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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Mar 19, 2002
Grant Date -
Jul 26, 2001
app pub date -
Jan 17, 2001
filing date -
Jan 18, 2000
priority date (Note) -
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Abstract
An intermetal insulating film containing at least silicon atoms, oxygen atoms and carbon atoms with the number ratio of oxygen atom to silicon atom being 1.5 or more and the number ratio of carbon atom to silicon atom being 1 to 2, and having a film thickness shrinkage at a time of oxidation of 14% or less is very low in dielectric constant, high in selectivity against resist etching and can be used without using a silicon oxide protective film in a semiconductor device.
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