Plasma process apparatus
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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-
Oct 28, 2003
Grant Date -
Aug 2, 2001
app pub date -
Dec 7, 2000
filing date -
Dec 7, 1999
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A plasma process apparatus includes a dielectric plate to emit plasma inside a chamber, and dielectric plate support members to support a dielectric plate. A plurality of gas introduction holes to supply reaction gas to the chamber interior are provided at the dielectric plate support members. The outlet of the gas introduction hole is open at the side facing the surface of substrate 8, and arranged at a peripheral region outer than dielectric plate 5. Ground potential is applied to a chamber lid and the dielectric plate support members, and bias voltage is applied to the substrate. Accordingly, a low-cost plasma process apparatus that can process uniformly a substrate of a large area using uniform plasma can be obtained.
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