Method for suppressing boron penetrating gate dielectric layer by pulsed nitrogen plasma doping
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United States of America Patent
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Aug 13, 2002
Grant Date -
Aug 2, 2001
app pub date -
Feb 28, 2001
filing date -
Jan 30, 2000
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Abstract
A method for suppressing boron penetrating the gate dielectric layer by pulsed nitrogen plasma doping. A pulsed nitrogen plasma doping process is utilized to dope nitrogen ions into the surface layer in the channel region of the semiconductor substrate. A thermal oxidation step is then performed to form a gate dielectric layer commixed with oxide and oxynitride over the channel region of the semiconductor substrate to avoid boron penetration effect accruing while a boron doped polysilicon layer is subsequently formed on the gate dielectric layer.
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