Method for forming programmable CMOS ROM devices
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United States of America Patent
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Apr 30, 2002
Grant Date -
Aug 9, 2001
app pub date -
Jun 23, 1998
filing date -
Jun 23, 1998
priority date (Note) -
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Abstract
The specification describes a CMOS compatible technique for programming MOS ROM devices. The technique involves doping the polysilicon gates of selected ROM devices with impurities having a type complementary to the channel, thereby raising the threshold voltage of those selected devices to a value above the operating voltage of the memory array. The programming step can be performed at the same time the CMOS gates are complementary doped thus allowing the ROM array to be programmed without additional processing steps.
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