Saw filter manufactured by using GaN single crystal thin film, and manufacturing method therefore
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United States of America Patent
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Jun 24, 2003
Grant Date -
Aug 9, 2001
app pub date -
Nov 29, 2000
filing date -
Jan 17, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A SAW (surface acoustic wave) filter manufactured by using a GaN piezoelectric thin film, and a manufacturing method therefor, are disclosed. The SAW filter of a high frequency band includes an .alpha.-Al.sub.2 O.sub.3 single crystal substrate. A GaN piezoelectric single crystal thin film of [0001] direction is formed to a thickness of 0.3-300 .mu.m on the substrate, and an IDT electrode pattern is formed on the GaN piezoelectric single crystal thin film. The method for manufacturing a SAW filter of a high frequency band includes the following steps. An .alpha.-Al.sub.2 O.sub.3 single crystal substrate is prepared, and then, a GaN piezoelectric single crystal thin film of [0001] direction is epitaxially grown to a thickness of 0.3-300 .mu.m on the substrate. Then an IDT electrode pattern is formed on the GaN piezoelectric single crystal thin film.
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