Semiconductor device and method for fabricating the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Sep 24, 2002
Grant Date -
Aug 9, 2001
app pub date -
Dec 14, 2000
filing date -
Sep 6, 1997
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A semiconductor device is disclosed, including: a semiconductor substrate; a gate electrode formed on the semiconductor substrate; a first gate insulating layer formed between the gate electrode and semiconductor substrate, and formed at a first region including one edge of the gate electrode; a second gate insulating layer formed between the gate electrode and semiconductor substrate, and formed at a second portion including the other edge of the gate electrode, the second gate insulating layer being thicker than the first gate insulating layer; a first impurity region formed in a predetermined portion of the semiconductor substrate, placed on both sides of the gate electrode; and a second impurity region formed in a predetermined portion of the semiconductor substrate, placed under the second gate insulating layer.
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