Apparatus for fabricating semiconductor structures and method of forming the structures
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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Issued Date -
Aug 16, 2001
app pub date -
Feb 9, 2001
filing date -
Feb 10, 2000
priority date (Note) -
Abandoned
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Abstract
An apparatus (100) and method (800) for forming high quality epitaxial layers of monocrystalline materials grown overlying monocrystalline substrates (310) such as large silicon wafers is provided. The apparatus (100) includes at least two deposition chambers (110) and (140) that are coupled together. The first chamber (110) is used to form an accommodating buffer layer (320) on the substrate (310) and the second (140) is used to form a layer of monocrystalline material (330) overlying the accommodating buffer layer (320).
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