Light-emitting device using group III nitride group compound semiconductor
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United States of America Patent
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Feb 11, 2003
Grant Date -
Aug 16, 2001
app pub date -
Nov 30, 2000
filing date -
Nov 30, 1999
priority date (Note) -
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Abstract
A light emitting device using a group III nitride group compound semiconductor is disclosed. The device includes a substrate, a group III nitride group compound semiconductor layer, and a rectangular parallelepiped stack Rd which is formed by etching multiple group III nitride group compound semiconductor layers laminated on the group III nitride group compound semiconductor layer. The group III nitride group compound semiconductor layer comprises regions, which have many defects and less defects, respectively, and are formed in a striped pattern. Each of the boundaries between the regions with less defects and more defects or a plane which includes a longitudinal edge of the buffer layer is vertical to the substrate and parallel to a longitudinal plane of the rectangular parallelepiped stack Rd. The boundaries and two stack facets Mrr of the rectangular parallelepiped stack Rd are parallel to each other.
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