Trench MOS device and process for radhard device
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United States of America Patent
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Sep 28, 2004
Issued Date -
N/A
app pub date -
Apr 27, 2001
filing date -
Apr 22, 1996
priority date (Note) -
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Abstract
A MOSgated device is resistant to both high radiation and SEE environments. The active area of the device is formed of trench devices having a thin gate dielectric on the trench walls and a thicker dielectric on the trench bottoms over the device depletion region. Termination rings formed of ring-shaped trenches containing floating polysilicon plugs surrounds and terminates the device active area.
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