Non-uniform gate/dielectric field effect transistor
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United States of America Patent
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Jun 1, 2004
Grant Date -
Aug 30, 2001
app pub date -
Mar 15, 2001
filing date -
Sep 30, 1998
priority date (Note) -
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Abstract
A field effect transistor (FET) structure, and method for making the same, which further suppresses short-channel effects based on variations within the gate dielectric itself. The FET structure utilizes non-uniform gate dielectrics to alter the vertical electric field presented along the channel. The thickness and/or dielectric constant of the gate dielectric is varied along the length of the channel to present a vertical electric field which varies in a manner that tends to reduce the short-channel effects and gate capacitances.
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