Method for manufacturing non-volatile semiconductor memory
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United States of America Patent
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Oct 22, 2002
Grant Date -
Sep 13, 2001
app pub date -
Dec 18, 2000
filing date -
Mar 10, 2000
priority date (Note) -
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status (Latency Note)
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Abstract
A manufacturing method includes the steps of forming a striped pattern extending in the word line direction; depositing an insulating film on the striped pattern and then forming a side wall insulating film on both side walls of the striped pattern by etching the surface throughout; selectively removing the striped pattern and then depositing a gate insulating film including a trap gate insulating film on an exposed substrate; and depositing a conductive layer throughout on the surface and removing the upper part of the conductive layer except for a region between the side wall insulating films. Consequently, the conductive layer between the side wall insulating films becomes the word line.
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