Method and apparatus for single crystal gallium nitride (GAN) bulk synthesis
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United States of America Patent
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Jun 18, 2002
Grant Date -
Sep 20, 2001
app pub date -
Apr 16, 2001
filing date -
Jan 8, 1999
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Abstract
A method and apparatus for homoepitaxial growth of freestanding, single bulk crystal Gallium Nitride (GaN) are provided, wherein a step of nucleating GaN in a reactor results in a GaN nucleation layer having a thickness of a few monolayers. The nucleation layer is stabilized, and a single bulk crystal GaN is grown from gas phase reactants on the GaN nucleation layer. The reactor is formed from ultra low oxygen stainless steel.
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