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Abstract

A method for fabricating inter-metal oxide in semiconductor devices and semiconductor devices is provided. The method begins by providing a semiconductor substrate having a plurality of patterned conductive features. The method then moves to where a high density plasma (HDP) operation is performed and is configured to deposit an oxide layer over the plurality of patterned conductive features. The HDP operation includes a deposition component and a sputtering component. The deposition component is driven by a deposition gas and the sputtering component is driven by a sputtering gas. The HDP operation forms oxide pyramids over the plurality of patterned conductive features. The method now moves to where the deposition gas is removed to close off the deposition component in the HDP operation. Now, the HDP operation is run with the sputtering gas while retaining the sputtering component. The sputtering component is configured to substantially remove the oxide pyramids from over the plurality of patterned conductive features. Preferably, the plurality of patterned conductive features are either patterned metallization features or patterned polysilicon features.

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First Claim