US Patent Application No: 2001/0025,826

Number of patents in Portfolio can not be more than 2000

Dense-plasma etching of InP-based materials using chlorine and nitrogen

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Abstract

A semiconductor dry etching process that provides deep, smooth, and vertical etching of InP-based materials using a chlorinated plasma with the addition of nitrogen (N.sub.2) gas. Etching of InP-based semiconductors using an appropriate Cl.sub.2/N.sub.2 mixture without any additional gases provides improved surface morphology, anisotropy and etch rates.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
LNL TECHNOLOGIES, INC.CAMBRIDGE, MA17
NORTHWESTERN UNIVERSITYEVANSTON, IL725

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ho, Seng-Tiong Wheeling, IL 50 698
Park, Seoijin Lawrenceville, NJ 2 5
Pierson, Thomas E Evanston, IL 2 14
Youtsey, Christopher T Dallas, TX 5 76

Patent Citation Ranking

Forward Cites

Patent Info (Count) # Cites Year
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (2)
6,665,033 Method for forming alignment layer by ion beam surface modification 25 2000
7,097,884 Stability of ion beam generated alignment layers by surface modification 1 2003
 
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE (1)
7,776,752 Method of etching for multi-layered structure of semiconductors in group III-V and method for manufacturing vertical cavity surface emitting laser device 0 2006
 
FEI COMPANY (1)
8,303,833 High resolution plasma etch 0 2007
 
NORTHROP GRUMMAN SYSTEMS CORPORATION (1)
7,262,137 Dry etching process for compound semiconductors 0 2004