Dense-plasma etching of InP-based materials using chlorine and nitrogen
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Oct 4, 2001
app pub date -
Feb 28, 2001
filing date -
Feb 28, 2000
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A semiconductor dry etching process that provides deep, smooth, and vertical etching of InP-based materials using a chlorinated plasma with the addition of nitrogen (N.sub.2) gas. Etching of InP-based semiconductors using an appropriate Cl.sub.2/N.sub.2 mixture without any additional gases provides improved surface morphology, anisotropy and etch rates.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully