Heat treatment apparatus
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United States of America Patent
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Feb 11, 2003
Grant Date -
Oct 11, 2001
app pub date -
Feb 16, 2001
filing date -
Apr 6, 2000
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Abstract
A substrate heat treatment apparatus irradiating a substrate such as a semiconductor wafer with light and performing heat treatment is provided. 19 lamps 82 are arranged on a plane in the form of a honeycomb to form a lamp group 81. The lamp group 81 has 6-fold rotation symmetry about a symmetry axis XR. A substrate W is rotated about a rotation axis XW in a plane parallel to that formed by the lamp group 81. The symmetry axis XR of the lamp group 81 and the rotation axis XW of the substrate W are displaced for relaxing peaks and bottoms of illuminance distribution on the substrate W resulting from regularity of arrangement of the lamp group 81. Consequently, fluctuation of radial illuminance distribution on the substrate W is reduced and improving uniformity is improved. When the uniformity of radial illuminance distribution on the substrate W is improved, temperature uniformity of the substrate W in heat treatment can be ensured.
First Claim
Family
- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
- SCREEN HOLDINGS CO., LTD.
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Ito, Yoshio | Kyoto, JP | 105 | 1195 |
Nishihara, Hideo | Kyoto, JP | 6 | 98 |
Takahashi, Mitsukazu | Kyoto, JP | 14 | 567 |
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Fee | Large entity fee | small entity fee | micro entity fee | due date |
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Fee | Large entity fee | small entity fee | micro entity fee |
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Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
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