PVD deposition of titanium and titanium nitride layers in the same chamber without use of a collimator or a shutter
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United States of America Patent
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Jan 29, 2002
Grant Date -
Oct 18, 2001
app pub date -
Mar 14, 2000
filing date -
Mar 14, 2000
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Abstract
Ti and TiN layers are formed on an integrated circuit substrate using a titanium target in non-nitrided mode in a hollow cathode magnetron apparatus. Neither a collimator nor a shield is used. Ti and TiN layers are deposited in vias and trenches having aspect ratios up to 5:1.
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