Sputtering target and method for the manufacture thereof

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20010030172A1
SERIAL NO

09864703

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Abstract

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A sputtering target is provided which provides early stabilization of the film-deposition rate of the sputtering target from its initial stage of use. The sputtering target surface subjected to erosion is formed with a surface-deformed layer. The surface-deformed layer is reduced by precision machining and removed by etching. The extent of etching is controlled so that the surface roughness (Ra) is in a range between 0.1% and 10% of the mean crystal grain diameter of the material constituting the target. The surface roughness (Ra) is defined as the mean roughness on the center line of the surface.

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Patent Owner(s)

Patent OwnerAddress
NIKKO MATERIALS COMPANY LIMITEDTOKYO 105-8407

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ohhashi, Tateo Ibaraki-Ken, JP 9 227
Seki, Kazuhiro Ibaraki-Ken, JP 22 691
Takahashi, Hideyuki Ibaraki-Ken, JP 354 3400

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