Virtual-ground, split-gate flash memory cell arrangements and method for producing same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Feb 11, 2003
Grant Date -
Oct 18, 2001
app pub date -
Dec 19, 2000
filing date -
Dec 21, 1999
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A memory cell including: (a) a semiconductor substrate (1) provided with first and second diffusion layers (8); (b) a floating gate (11) on a floating gate insulating film (9); (c) a selection gate (4) on a selection gate insulating film (2); (d) a control gate (13) on a control gate insulating film (12); (e) the first and second diffusion layers (8) being arranged as the source and the drain of a field effect transistor structure, and the floating gate (11), selection gate (4) and control gate (13) being arranged as series field effect gates in the field effect transistor structure.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully