Stacked gate electrode for a MOS transistor of a semiconductor device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jun 15, 2004
Grant Date -
Oct 18, 2001
app pub date -
Apr 11, 2001
filing date -
Apr 14, 2000
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A semiconductor device with an MOS transistor gate electrode in a stacked structure comprising a silicon layer, a metal silicide layer, a reaction barrier layer such as a metal nitride layer and a metallic layer formed from the bottom upwards has an increased circuit performance owing to a gate resistance-reducing effect.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully