US Patent Application No: 2001/0030,839

Dual spin-valve magnetoresistive sensor

Stats

Oct 18, 2001
Publication date
Jan 10, 2001
filing date
09/757,500
serial no
ABAN
status

Importance

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Abstract

A dual spin-valve magnetoresistive sensor includes a free ferromagnetic layer and first and second nonmagnetic conductive spacers adjacent to opposing first and second surfaces of the free layer, respectively. A pinned ferromagnetic layer consisting of a single-film ferromagnetic layer is adjacent to the first spacer and a laminated pinned ferromagnetic structure is adjacent to the second spacer. The laminated structure includes first and second pinned ferromagnetic films separated by a film that provides antiferromagnetic coupling. First and second antiferromagnetic layers can be provided adjacent to the pinned ferromagnetic layer and the laminated pinned structure, respectively. The sensor can be incorporated, for example, into a magnetic storage system.

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First Claim

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Patent Owner(s)

Patent Owner	Address	Total Patents
SEAGATE TECHNOLOGY LLC	SCOTTS VALLEY, CA	5125

International Classification(s)

G11B:INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BET....

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[Patents Count]

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
Chen, Jian	San Jose, CA	1002	7106
Fernandez-de-Castro, Juan Jose	Lakeville, MN	4	20
Zhong, Lieping	Savage, MN	1	6

Patent Citation Ranking

Forward Cites

Patent Info	# Cites	Year
INTERNATIONAL BUSINESS MACHINES CORPORATION (2)
6,801,412 Method and apparatus for improved pinning strength for self-pinned giant magnetoresistive heads	1	2002
6,781,798 CPP sensor with dual self-pinned AP pinned layer structures	8	2002
MICRON TECHNOLOGY, INC. (2)
7,161,201 Antiferromagnetically stabilized pseudo spin valve for memory applications	0	2005
7,170,123 Antiferromagnetically stabilized pseudo spin valve for memory applications	0	2005
NVE CORPORATION (2)
7,468,664 Enclosure tamper detection and protection	4	2007
8,294,577 Stressed magnetoresistive tamper detection devices	0	2008

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