Method of manufacturing capacitor of semiconductor device using an amorphous TaON
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United States of America Patent
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Mar 11, 2003
Grant Date -
Nov 1, 2001
app pub date -
Dec 26, 2000
filing date -
Dec 23, 1999
priority date (Note) -
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Abstract
The present invention discloses a method of manufacturing a TaON capacitor having a high capacity comprising the steps of forming an intermediate insulating layer on a semiconductor substrate; forming a lower electrode on the intermediate insulating layer; depositing a TaON thin film in an amorphous state on the lower electrode; annealing the amorphous TaON thin film in a vacuum state to form a crystalline TaON thin film that will serve as a dielectric layer; and forming an upper electrode on the dielectric layer made of the TaON thin film.
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