Porous silicon oxycarbide integrated circuit insulator

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United States of America Patent

APP PUB NO 20010038132A1
SERIAL NO

09517029

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Abstract

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An integrated circuit includes at least one porous silicon oxycarbide (SiOC) insulator, which provides good mechanical strength and a low dielectric constant (e.g., .epsilon..sub.R<2) for minimizing parasitic capacitance. The insulator provides IC isolation, such as between circuit elements, between interconnection lines, between circuit elements and interconnection lines, or as a passivation layer overlying both circuit elements and interconnection lines. The low dielectric constant silicon oxycarbide isolation insulator of the present invention reduces the parasitic capacitance between circuit nodes. As a result, the silicon oxycarbide isolation insulator advantageously provides reduced noise and signal crosstalk between circuit nodes, reduced power consumption, faster circuit operation, and minimizes the risk of potential timing faults.

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Patent Owner(s)

Patent OwnerAddress
NANYA TECHNOLOGY CORPHWA-YA TECHNOLOGY PARK 669 FUHSING 3 RD KUEISHAN TAO-YUAN HSIEN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ahn, Kie Y Chappaqua, US 652 41490
Forbes, Leonard Corvallis, US 1219 61459

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